Two new HF2LI blogs

Deep Level Transient Spectroscopy and pn Junction characterization

This month we’ve published two new blogs on our website, looking at how the HF2LI can be used in two specific applications.

Deep level transient spectroscopy (DLTS) is a technique used to characterize defects in semiconductor materials and in one of the new blogs we show how the HF2LI can be used to save time when making this type of measurement.

In the second blog we show how the HF2LI can be used to characterize the I-V curves of p-n junction devices, taking a solar cell as a specific example. This kind of measurement requires careful setup and analysis, which the blog explains in detail.

call +41 44 515 04 10
or leave us a message.

To help with your request and to comply with data protection legislation we will need to confirm that you agree for us to collect and use your personal data:

See here for details of the data that we hold on our customers and what we do with it. If you have any questions please contact